Cypress CY14E256L Uživatelský manuál stáhnout pdf (Strana 1)

CY14E256L

256 Kbit (32K x 8) nvSRAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose

CA 95134-1709 • 408-943-2600

Document Number: 001-06968 Rev. *H Revised November 26, 2009

Features

■

25 ns, 35 ns, and 45 ns Access Times

■

Pin Compatible with STK14C88

■

Hands Off Automatic STORE on Power Down with External

68 µF Capacitor

■

STORE to QuantumTrap Nonvolatile Elements is Initiated by

Software, Hardware, or AutoStore on Power Down

■

RECALL to SRAM Initiated by Software or Power Up

■

Unlimited READ, WRITE, and RECALL Cycles

■

1,000,000 STORE Cycles to QuantumTrap

■

100 Year Data Retention to QuantumTrap

■

Single 5V±10% Operation

■

Commercial and Industrial Temperature

■

32-Pin SOIC Package (RoHS Compliance)

■

CDIP (300 mil) Package

Functional Description

The Cypress CY14E256L is a fast static RAM with a nonvolatile

element in each memory cell. The embedded nonvolatile

elements incorporate QuantumTrap technology producing the

world’s most reliable nonvolatile memory. The SRAM provides

unlimited read and write cycles, while independent, nonvolatile

data resides in the highly reliable QuantumTrap cell. Data

transfers from the SRAM to the nonvolatile elements (the

STORE operation) takes place automatically at power down. On

power up, data is restored to the SRAM (the RECALL operation)

from the nonvolatile memory. Both the STORE and RECALL

operations are also available under software control. A hardware

STORE is initiated with the HSB

pin.

STORE/

RECALL

CONTROL

POWER

CONTROL

SOFTWARE

DETECT

STATIC RAM

ARRAY

512 X 512

Quantum Trap

512 X 512

STORE

RECALL

COLUMN I/O

COLUMN DEC

ROW DECODER

INPUT BUFFERS

HSB

CAP

Logic Block Diagram

Not Recommended for New Designs

[+] Feedback [+] Feedback

1 2 3 4 5 6 ... 18 19

Shrnutí obsahu

Strany 1 - 256 Kbit (32K x 8) nvSRAM

CY14E256L256 Kbit (32K x 8) nvSRAMCypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600Document Number: 001-0

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CY14E256LDocument Number: 001-06968 Rev. *H Page 10 of 19AC Switching Characteristics SRAM Read CycleParameterDescription25 ns 35 ns 45 ns UnitMin M

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CY14E256LDocument Number: 001-06968 Rev. *H Page 11 of 19SRAM Write CycleParameterDescription25 ns 35 ns 45 ns UnitMin Max Min Max Min MaxCypressPar

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CY14E256LDocument Number: 001-06968 Rev. *H Page 12 of 19AutoStore or Power Up RECALLParameter Alt DescriptionCY14E256LUnitMin MaxtHRECALL [15]tRESTOR

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CY14E256LDocument Number: 001-06968 Rev. *H Page 13 of 19Software Controlled STORE/RECALL CycleThe software controlled STORE/RECALL cycle follows. [19

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CY14E256LDocument Number: 001-06968 Rev. *H Page 14 of 19Hardware STORE CycleParameter Alt DescriptionCY14E256LUnitMin MaxtDHSB [16, 20]tRECOVER, tHHQ

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CY14E256LDocument Number: 001-06968 Rev. *H Page 15 of 19Ordering InformationThese parts are not recommended for new designs.Speed(ns)Ordering Code Pa

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CY14E256LDocument Number: 001-06968 Rev. *H Page 16 of 19Package DiagramFigure 14. 32-Pin (300 Mil) SOIC (51-85127)51-85058 *APIN 1 IDSEATING PLANE11

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CY14E256LDocument Number: 001-06968 Rev. *H Page 17 of 19Figure 15. 32-Pin (300 Mil) CDIP (001-51694)Package Diagram (continued)001-51694 **Not Recom

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CY14E256LDocument Number: 001-06968 Rev. *H Page 18 of 19Document History PageDocument Title: CY14E256L 256 Kbit (32K x 8) nvSRAM Document Number: 001

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Document Number: 001-06968 Rev. *H Revised November 26, 2009 Page 19 of 19All products and company names mentioned in this document may be the tradema

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CY14E256LDocument Number: 001-06968 Rev. *H Page 2 of 19ContentsFeatures ...

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CY14E256LDocument Number: 001-06968 Rev. *H Page 3 of 19 Pin ConfigurationsFigure 1. Pin Diagram: 32-Pin SOIC/DIPTable 1. Pin DefinitionsPin Name Al

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CY14E256LDocument Number: 001-06968 Rev. *H Page 4 of 19Device OperationThe CY14E256L nvSRAM is made up of two functional compo-nents paired in the sa

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CY14E256LDocument Number: 001-06968 Rev. *H Page 5 of 19Hardware STORE (HSB) OperationThe CY14E256L provides the HSB pin for controlling andacknowledg

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CY14E256LDocument Number: 001-06968 Rev. *H Page 6 of 19Data ProtectionThe CY14E256L protects data from corruption during lowvoltage conditions by inh

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CY14E256LDocument Number: 001-06968 Rev. *H Page 7 of 19Best Practices nvSRAM products have been used effectively for over 15 years.While ease of use

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CY14E256LDocument Number: 001-06968 Rev. *H Page 8 of 19Maximum RatingsExceeding maximum ratings may shorten the useful life of thedevice. These user

Strany 19 - Products

CY14E256LDocument Number: 001-06968 Rev. *H Page 9 of 19VOHOutput HIGH Voltage IOUT = –4 mA 2.4 VVOLOutput LOW Voltage IOUT = 8 mA 0.4 VVBLLogic ‘0’